Jitendra Pal Singh
Advanced Analysis Center, Korea Institute of Science and Technology, Seoul-02792, South Korea. Industrial Technology Convergence Center, Pohang Accelerator Laboratory, Pohang-37673, South Korea South Korea.
Lalit Kumar Gupta
Department of Applied Sciences, Krishna Engineering College, Ghaziabad-201007, Uttar Pradesh, India.
DOI https://dx.doi.org/10.33889/IJMEMS.2019.4.3-049
Abstract
Present work investigates the annealing effects on MgO thin films deposited using e-beam evaporation method. MgO thin films of thickness 5 and 50 nm were evaporated from MgO-pellet in ultra-high vacuum (2×10-8 Torr). As deposited thin films exhibit coordination similar to MgO bulk as envisaged from near edge X-ray absorption fine structure measurements. As deposited films were annealed at 300, 400 and 500oC in open environment. Thickness of films remain unaltered with annealing within experimental error. Raman spectroscopic measurements further confirm the presence of bands associated with Mg-O bonding at such low thicknesses.
Keywords- e-beam evaporation, Annealing, Rutherford back scattering, Raman spectroscopy.
Citation
Singh, J. P., & Gupta, L. K. (2019). Annealing Effects on MgO Films Grown using e-beam Evaporation. International Journal of Mathematical, Engineering and Management Sciences, 4(3), 619-626. https://dx.doi.org/10.33889/IJMEMS.2019.4.3-049.